features ? low on-state resistance ? excellent gate charge x r ds(on) product ( fom ) ? fully characterized avalanche voltage and current ? specially desigened for dc-dc converter, off-line ups, automotive system, solenoid and motor control ? in compliance with eu rohs 2002/95/ec directives mechanical information ? case: to-220ab molded plastic ? terminals : solderable per mil-std-750,method 2026 marking & ordering information type marking package packing HY125N10T 125n10t to-220ab 50pcs/tube absolute maximum ratings (t c =25c unless otherwise specified ) symbol thermal characteristics company reserves the right to improve product design HY125N10T v v a a junction-to-case thermal resistance 100v / 125a n-channel enhancement mode mosfet t c =25 units parameter 100v, r ds(on) =5.8m w @v gs =10v, i d =40a drain-source voltage operating junction and storage temperature range w mj t c =25 maximum power dissipation derating factor v gs i dm /w 62.5 note : 1. maximum dc current limited by the package symbol continuous drain current 1) junction-to-ambient thermal resistance r q ja pulsed drain current 1) /w 0.78 units t j, t stg 480 192 1.28 1250 -55 to +175 value e as gate-source voltage v ds avalanche energy with single pulse, l=0.3mh parameter r q jc value 100 + 20 120 i d p d fig. 1 C forward current derating curve ambient temperature ( ) 25 50 75 100 125 150 175 single phase half wave 60hz fig. 2 C maximum non - 1 2 5 10 single 1 4 10 20 100 t 0 0.2 0.4 0.6 0.0 to - 220ab drain gate source 1 2 3 2 3 1 rev.1, 8 - may - 2012 page.1
symbol min. typ. max. units bv dss 100 - - v v gs(th) 2 3 4 v r ds(on) - 4.6 5.8 m w i dss - - 1 ua i gss - - 100 na qg - 178 - qgs - 32 - qgd - 45 - t d(on) - 31.8 - t r - 19.2 - t d(off) - 76 - t f - 52 - c iss - 9200 - c oss - 680 - c rss - 320 - rg - 1.3 - w i s - - 120 a v sd - 0.86 1.4 v t rr - 72 - ns q rr - 210 - uc note : pulse test : pulse width Q 300us, duty cycle Q 2% - i s =80a v gs =0v reverse recovery charge max. diode forwad voltage diode forward voltage reverse recovery time turn-on delay time v gs = + 20v v ds =0v zero gate voltage drain current total gate charge gate body leakage current source-drain diode reverse transfer capacitance gate-drain charge dynamic v ds =50v i d =40a v gs =10v nc ns static v gs =0v i d =250ua v ds =v gs i d =250ua v gs =10v i d =80a v ds =80v v gs =0v turn-on rise time turn-off delay time turn-off fall time v ds =30v v gs =0v f=1.0mh z pf input capacitance output capacitance v gs =0v i s =40a di/dt=100a/us v dd =50v i d =40a v gs =10v r g =3.6 w drain-source on-state resistance gate resistance HY125N10T electrical characteristics ( t c =25, unless otherwise noted ) test condition parameter drain-source breakdown voltage gate threshold voltage gate-source charge rev.1, 8 - may - 2012 page.2
HY125N10T typical characteristics curves ( t c =25 , unless otherwise noted) 0 40 80 120 160 200 0 5 10 15 20 i d - drain - to - source current (a) v ds - drain - to - source voltage (v) 6.0v v gs = 10v~ 8.0v 5.0v 7.0v 3 4 5 6 7 8 0 20 40 60 80 100 r ds(on) - on resistance(m w ) i d - drain current (a) v gs =10v 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain - to - source voltage (v) ciss f = 1mhz v gs = 0v crss coss 0 4 8 12 16 20 5 6 7 8 9 10 r ds(on) - on resistance(m w ) v gs - gate - to - source voltage (v) i d =80a fig.1 output characteristric 0 2 4 6 8 10 12 0 40 80 120 160 200 v gs - gate - to - source voltage (v) q g - gate charge (nc) v ds =50v i d =40a fig.2 on - resistance vs drain current fig.3 on - resistance vs gate to source voltage fig.5 capacitance characteristic fig.6 gate charge characteristic rev.1, 8 - may - 2012 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) - on - resistance (normalized) t j - junction temperature ( o c) v gs =10 v i d =80a fig.4 on - resistance vs junction temperature page.3
HY125N10T typical characteristics curves ( t c =25 , unless otherwise noted) 0 40 80 120 160 200 0 25 50 75 100 125 150 175 power rating t j - junction temperature ( o c) 0.01 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - to - drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c fig.7 power derating curve fig.9 body diode forward voltage characteristic 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 175 bv dss - breakdown voltage (normalized) t j - junction temperature ( o c) i d = 250 m a fig.8 breakdown voltage vs junction temperature rev.1, 8 - may - 2012 page.4
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